AFM and Raman studies of topological insulator materials subject to argon plasma etching

نویسندگان

  • Isaac Childres
  • Jifa Tian
  • Ireneusz Miotkowski
  • Yong P. Chen
چکیده

AFM and Raman studies of topological insulator materials subject to argon plasma etching Isaac Childres a b , Jifa Tian a b , Ireneusz Miotkowski a b & Yong Chen a b c a Department of Physics, Purdue University, West Lafayette, IN 47907, USA b Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA c School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA Version of record first published: 26 Sep 2012.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements

The ability of the atomic force microscope ~AFM! to realize lithography patterns on silicon surfaces is widely known and leads to the formation of silicon nanostructures after an etching step. In this article, we aim at improving the fabrication process to yield silicon nanowires with minimum lateral dimensions for the realization of Coulomb blockade based devices. First, we focus on the AFM li...

متن کامل

Micro-Raman and resistance measurements of epitaxial La0.7Sr0.3MnO3 films

The Channel-Spark method was used for deposition of highly oriented ferromagnetic La 0.7 Sr 0.3 MnO 3 films on NdGaO3 substrates. It was found that additional oxygen decreases the film quality suppressing the Curie temperature and metal-insulator transition below the room temperature. To achieve the best quality of the films the samples were either annealed in high vacuum at deposition temperat...

متن کامل

The Department of Electrical Engineering

Materials with Dirac-type electronic band structure have recently drawn much interest. These materials revealed unique electrical, thermal and optical properties, which can be potentially used in future highspeed electronics. In this dissertation research, I investigate on two different classes of Dirac materials: graphene and topological insulators of the bismuth telluride (Bi2Te3) family. The...

متن کامل

Direct wafer bonding for MEMS and microelectronics

Direct wafer bonding is a method for fabricating advanced substrates for microelectromechanical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicon-on-insulator (SOI) wafer. SOI wafers offer many advantages over conventional silicon wafers. In IC technology, the switching speed of circuits fabricated on SOI is increased by 20-50% co...

متن کامل

Low-Loss Amorphous Silicon-On-Insulator Technology for Photonic Integrated Circuitry

We report the fabrication of low-loss amorphous silicon photonic wires deposited by plasma enhanced chemical vapor deposition. Single mode photonic wires were fabricated by 193nm optical lithography and dry etching. Propagation loss measurements show a loss of 3.46dB/cm for photonic wires (480×220nm) and 1.34dB/cm for ridge waveguides.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013